Dr. Baptiste Jean Germain Gault
© DFG / David Ausserhofer
Materials Science, Max-Planck-Institut für Eisenforschung, Düsseldorf
Baptiste Gault is being awarded the Leibniz Prize for the development of new techniques in atom probe tomography. These techniques enable both spatial resolution at the atomic scale and the quantification of elements, thus allowing the atomically resolved 3D representation of materials with a complex microstructure. During his doctorate, Gault successfully incorporated ultra-fast laser sources in an atom probe. As a result, instead of only conductive metals, researchers could now also characterise insulating materials including semiconductors, ceramics and biological material at the atomic level. Through further work on the use of pulsed lasers, Gault developed atom probe tomography into a technique applicable to all materials that can create 3D images of materials with atomic resolution. Gault's internationally recognised contributions to atom probe tomography are important to a wide range of material sciences applications.
Baptiste Gault studied physics in Le Havre, Paris and Rouen. In Rouen, he wrote his dissertation as part of the Groupe de Physique des Matériaux (GPM-CNRS). Following that, he made research visits to Sydney, Oxford and Hamilton, Canada between 2007 and 2015. Since 2016, he has led the Atom Probe Tomography group at Max-Planck-Institut für Eisenforschung in Düsseldorf and in 2018 he was awarded an ERC Consolidator Grant.